View MRF8P20165WH_9008368.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MRF8P20165WHr3 MRF8P20165WHsr3 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 mhz. ? typical doherty single--carrier w--cdma performance: v dd =28volts, i dqa = 550 ma, v gsb =1.3vdc,p out = 37 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 1930 mhz 16.1 47.0 7.1 --27.7 1960 mhz 16.3 47.7 7.1 --29.7 1995 mhz 16.3 46.0 7.0 --33.3 ? capable of handling 10:1 vswr, @ 32 vdc, 1960 mhz, 173 watts cw output power (2 db input overdrive from rated p out ) ? typical p out @ 3 db compression point ? 190 watts (1) features ? designed for wide instantaneous bandwidth applications. vbw res ? 100 mhz. ? designed for wideband applications that require 65 mhz signal bandwidth ? production tested in a symmetrical doherty configuration ? 100% par tested for guaranteed output power capability ? characterized with large--signal load--pull parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? rohs compliant ? ni--780--4 in tape and reel. r3 suffix = 250 units, 56 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 15. ? ni--780s--4 in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 15. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 125 c operating junction temperature (2) t j 225 c table 2. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 80 c, 37 w cw, 28 vdc, i dqa = 550 ma, v gsb = 1.3 vdc, 1960 mhz case temperature 114 c, 160 w cw, 28 vdc, i dqa = 550 ma, v gsb = 1.3 vdc, 1960 mhz r jc 0.79 0.53 c/w 1. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf. 2. continuous use at maximum temperature will affect mttf. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: MRF8P20165WH rev. 0, 4/2011 freescale semiconductor technical data 1930--1995 mhz, 37 w avg., 28 v single w--cdma lateral n--channel rf power mosfets MRF8P20165WHr3 MRF8P20165WHsr3 case 465h--02, style 1 ni--780s--4 MRF8P20165WHsr3 case 465m--01, style 1 n i -- 7 8 0 -- 4 MRF8P20165WHr3 (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb ? freescale semiconductor, inc., 2011. a ll rights reserved.
2 rf device data freescale semiconductor MRF8P20165WHr3 MRF8P20165WHsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c (minimum) machine model (per eia/jesd22--a115) b (minimum) charge device model (per jesd22--c101) iii (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 5 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics (2) gate threshold voltage (1) (v ds =10vdc,i d = 232 adc) v gs(th) 1.2 1.8 2.7 vdc gate quiescent voltage (v dd =28vdc,i da = 550 madc, measured in functional test) v gs(q) 2.0 2.7 3.5 vdc drain--source on--voltage (1) (v gs =10vdc,i d =1.5adc) v ds(on) 0.05 0.2 0.3 vdc functional tests (2,3,4) (in freescale doherty production test fixture, 50 ohm system) v dd =28vdc,i dqa = 550 ma, v gsb =1.3vdc, p out = 37 w avg., f1 = 1980 mhz, f2 = 2010 mhz, 2--carrier w--cdm a, iq magnitude clipping, input signal par = 9.8 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 14.2 14.8 17.2 db drain efficiency d 40.6 44.3 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.2 5.8 ? db adjacent channel power ratio acpr ? --31.0 --28.7 dbc typical broadband performance (4) ? (in freescale doherty characterization test fixture, 50 ohm system) v dd =28vdc,i dqa = 550 ma, v gsb =1.3vdc,p out = 37 w avg., single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) 1930 mhz 16.1 47.0 7.1 --27.7 1960 mhz 16.3 47.7 7.1 --29.7 1995 mhz 16.3 46.0 7.0 --33.3 1. side a and side b are tied together for this measurement. 2. v dda and v ddb must be tied together and powered by a single dc power supply. 3. part internally matched both on input and output. 4. measurement made with device in a sy mmetrical doherty configuration. (continued)
MRF8P20165WHr3 MRF8P20165WHsr3 3 rf device data freescale semiconductor table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (1) (in freescale doherty characterization test fixture, 50 ohm system) v dd =28vdc,i dqa = 550 ma, v gsb = 1.3 vdc, 1930--1995 mhz bandwidth p out @ 1 db compression point, cw p1db ? 104 ? w p out @ 3 db compression point (2) p3db ? 190 ? w imd symmetry @ 74 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 20 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 100 ? mhz gain flatness in 65 mhz bandwidth @ p out =37wavg. g f ? 0.2 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.017 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.01 ? db/ c 1. measurement made with device in a sy mmetrical doherty configuration. 2. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor MRF8P20165WHr3 MRF8P20165WHsr3 figure 2. mrf8p20165w hr3(whsr3) production test circuit component layout mrf8p20165w rev. 1 c8 v gga cut out area v ggb v ddb v dda c10 r2 c6 z1 r1 c3 c4 c2 c1 c11 c9 r3 c7 c19 c23 c25 c24 c29 c28 c26 c27 c13 c12 c15 c16 c p c18 c22 c14 note 1: component numbers c5, c17, c20 and c21 are not used. note 2: v dda and v ddb must be tied together and powered by a single dc power supply. c30 table 5. MRF8P20165WHr3(w hsr3) production test circuit c omponent designations and values part description part number manufacturer c1, c2, c6, c7, c12, c13 15 pf chip capacitors atc600f150jt250xt atc c3, c4 1.8 pf chip capacitors atc600f1r8bt250xt atc c8, c9, c24, c25 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c10, c11 22 f, 35 v tantalum capacitors t491x226k035at kemet c14 0.3 pf chip capacitor atc600f0r3bt250xt atc c15, c16 1.0 pf chip capacitors atc600f1r0bt250xt atc c18, c19 2.0 pf chip capacitors atc600f2r0bt250xt atc c22, c23 18 pf chip capacitors atc600f180jt250xt atc c26, c27 0.1 pf chip capacitors atc600f0r1bt250xt atc c28, c29 220 f, 50 v electrolytic capacitors 227cks050m illinois capacitor c30 0.8 pf chip capacitor atc600f0r8bt250xt atc r1 50 ? , 4 w chip resistor cw12010t0050gbk atc r2, r3 2.37 ? , 1/4 w chip resistors crcw12062r37fnea vishay z1 1750 mhz band 90 , 3 db hybrid coupler gsc351--hyb1900 soshin pcb 0.020 , r =3.5 ro4350b rogers
MRF8P20165WHr3 MRF8P20165WHsr3 5 rf device data freescale semiconductor figure 3. MRF8P20165WHr3(whsr3) character ization test circuit component layout v gga c7 r1 c5 z1 r3 c8 c6 c3 c4 c1 c2 r2 c29 c30 c27 c28 c24 c23 c18 c17 c22 c21 c19 c20 c10 c9 c16 c15 c12 c11 c13 c14 c p c25 c26 mrf8p20165w rev. 0 v ggb v ddb v dda note: v dda and v ddb must be tied together and powered by a single dc power supply. table 6. MRF8P20165WHr3(whsr3) characterizatio n test circuit component designations and values part description part number manufacturer c1 1.6 pf chip capacitor atc600s1r6bt250xt atc c2 1.8 pf chip capacitor atc600s1r8bt250xt atc c3, c4, c5, c6, c21, c22 c29, c30 10 pf chip capacitors atc600s100jt250xt atc c7, c8, c23, c24 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c9,c11,c13,c15 2.7 pf chip capacitors atc600s2r7bt250xt atc c10, c12, c14, c16, c17 1 pf chip capacitors atc600s1r0bt250xt atc c18, c28 0.6 pf chip capacitors atc600s0r6bt250xt atc c19, c20 1.5 pf chip capacitors atc600s1r5bt250xt atc c25, c26 330 f, 35 v electrolytic capacitors mcgpr35v337m10x16--rh multicomp c27 0.5 pf chip capacitor atc600s0r5bt250xt atc r1, r2 2.37 ? , 1/4 w chip resistors crcw12062r37fnea vishay r3 51 ? , 1/4 w chip resistor crcw120651r0fkea vishay z1 1900 mhz band 90 , 3 db hybrid coupler gsc351--hyb1900 soshin pcb 0.030 , r =3.48 ro4350 rogers
6 rf device data freescale semiconductor MRF8P20165WHr3 MRF8P20165WHsr3 4 2 2 4 2 2 single--ended quadrature combined doherty push--pull 4 4 4 4 figure 4. possible circuit topologies
MRF8P20165WHr3 MRF8P20165WHsr3 7 rf device data freescale semiconductor typical characteristics parc (db) 1880 g ps acpr f, frequency (mhz) figure 5. 2--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 37 watts avg. -- 3 . 5 -- 2 . 5 --2.75 -- 3 --3.25 10 20 19 18 -- 3 7 52 50 48 46 -- 2 7 -- 2 9 -- 3 1 -- 3 3 d , drain efficiency (%) d g ps , power gain (db) 17 16 15 14 13 12 11 1900 1920 1940 1960 1980 2000 2020 2040 44 -- 3 5 --3.75 im3, third order intermodulation (dbc) -- 2 5 -- 2 1 -- 2 2 -- 2 3 -- 2 4 -- 2 6 acpr (dbc) im3 parc v dd =28vdc,p out =37w(avg.),i dqa = 550 ma, v gsb =1.3vdc 2--carrier w--cdma, 3.84 mhz channel bandwidth 30 mhz carrier spacing, input signal par = 9.8 db @ 0. 01% probab ility on ccdf parc (db) 1880 g ps acpr f, frequency (mhz) figure 6. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 37 watts avg. -- 3 . 5 -- 2 . 5 --2.75 -- 3 --3.25 10 20 19 18 -- 3 6 52 50 48 46 -- 2 6 -- 2 8 -- 3 0 -- 3 2 d , drain efficiency (%) d g ps , power gain (db) 17 16 15 14 13 12 11 1900 1920 1940 1960 1980 2000 2020 2040 44 -- 3 4 --3.75 acpr (dbc) parc v dd =28vdc,p out =37w(avg.),i dqa = 550 ma, v gsb =1.3vdc single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf figure 7. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 200 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u 100 v dd =28vdc,p out = 74 w (pep), i dqa = 550 ma, v gsb =1.3vdc two--tone measurements, (f1 + f2)/2 = center frequency of 1960 mhz
8 rf device data freescale semiconductor MRF8P20165WHr3 MRF8P20165WHsr3 typical characteristics figure 8. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 20 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 10 30 40 60 0 60 50 40 30 20 10 d , drain efficiency (%) -- 3 d b = 3 9 w 50 d acpr parc acpr (dbc) -- 4 0 -- 1 0 -- 1 5 -- 2 0 -- 3 0 -- 2 5 -- 3 5 17.5 g ps , power gain (db) 17 16.5 16 15.5 15 14.5 g ps input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf v dd =28vdc,i dqa = 550 ma, v gsb =1.3vdc f = 1960 mhz, single--carrier w--cdma 3.84 mhz channel bandwidth -- 1 d b = 1 7 w -- 2 d b = 2 8 w 1 g ps acpr p out , output power (watts) avg. figure 9. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 12 18 0 60 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 17 16 10 100 200 10 -- 6 0 acpr (dbc) 15 14 13 0 -- 3 0 -- 4 0 -- 5 0 v dd =28vdc,i dqa = 550 ma, v gsb =1.3vdc single--carrier w--cdma, 3.84 mhz channel bandwidth 1930 mhz input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf 1995 mhz 1960 mhz 1930 mhz 1960 mhz 1995 mhz 1930 mhz 1960 mhz 1995 mhz 1 p out , output power (watts) avg. figure 10. 2--carrier w--cdma power gain, im3, im5, im7 versus output power 12 18 -- 7 0 -- 1 0 -- 2 0 -- 3 0 -- 4 0 -- 5 0 im3, im5, im7 (dbc) g ps , power gain (db) 17 16 10 200 -- 6 0 15 14 13 figure 11. broadband frequency response 0 18 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 550 ma v gsb =1.3vdc 12 9 6 gain (db) 15 3 1800 1835 1870 1905 1940 1975 2010 2045 2080 100 im3--u im3--l im5--u im5--l im7--u im7--l g ps input signal par = 9.8 db @ 0.01% probab ility on ccdf v dd =28vdc,i dqa = 550 ma, v gsb = 1.3 vdc, f1 = 1945 mhz f2 = 1975 mhz, 2--carrier w--cdma, 3.84 mhz channel bandwidth
MRF8P20165WHr3 MRF8P20165WHsr3 9 rf device data freescale semiconductor w--cdma test signal 10 0.0001 100 0 peak--to--average (db) figure 12. ccdf w--cdma iq magnitude clipping, 2--carrier test signal 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 9.8 db @ 0.01% probabilit y on ccdf input signal 12 figure 13. 2-carrier w-cdma spectrum f, frequency (mhz) -- 11 0 --120 -- 7 0 -- 2 0 -- 8 0 -- 6 0 -- 5 0 (db) -- 9 0 --100 -- 4 0 -- 3 0 3.84 mhz channel bw -- i m 3 i n 3.84 mhz bw +im3 in 3.84 mhz bw --acpr in 3.84 mhz bw +acpr in 3.84 mhz bw 60 15 45 30 0 -- 1 5 -- 3 0 -- 4 5 -- 6 0 --75 75 10 0.0001 100 0 peak--to--average (db) figure 14. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 9.9 db @ 0.01% probabilit y on ccdf input signal 12 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 15. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0
10 rf device data freescale semiconductor MRF8P20165WHr3 MRF8P20165WHsr3 v dd =28vdc,i dqa = 550 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 1930 16.0 -- j8.99 1.58 -- j5.68 50.4 110 55.3 51.2 132 55.8 1960 17.2 -- j2.43 1.55 -- j6.08 50.4 110 54.4 51.3 135 53.5 1990 18.6 + j3.55 1.93 -- j5.82 50.4 110 54.4 51.2 132 55.4 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 16. carrier side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd =28vdc,i dqa = 550 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max drain efficiency p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 1930 16.0-- j8.99 3.45 -- j3.43 48.5 71 65.8 49.6 91 66.5 1960 17.2 -- j2.43 3.68 -- j3.88 48.7 74 65.6 49.6 91 66.1 1990 18.6 + j3.55 2.95-- j3.99 48.2 66 65.1 49.6 91 65.3 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 17. carrier side load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner
MRF8P20165WHr3 MRF8P20165WHsr3 11 rf device data freescale semiconductor package dimensions
12 rf device data freescale semiconductor MRF8P20165WHr3 MRF8P20165WHsr3
MRF8P20165WHr3 MRF8P20165WHsr3 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor MRF8P20165WHr3 MRF8P20165WHsr3
MRF8P20165WHr3 MRF8P20165WHsr3 15 rf device data freescale semiconductor product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? .s2p file for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for MRF8P20165WH and MRF8P20165WHs parts will be available for 2 years after release of MRF8P20165WH and MRF8P20165WHs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered MRF8P20165WH and MRF8P20165WHs in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 apr. 2011 ? initial release of data sheet
16 rf device data freescale semiconductor MRF8P20165WHr3 MRF8P20165WHsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF8P20165WH rev. 0, 4/2011

▲Up To Search▲

Price & Availability of MRF8P20165WH

	To Download MRF8P20165WH Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .